Wavelength Dependence of Efficiency Limiting Mechanisms in Type-I Mid-Infrared GaInAsSb/GaSb Lasers

The efficiency limiting mechanisms in type-I GaInAsSb-based quantum well (QW) lasers, emitting at 2.3, 2.6 and 2.9 μm, are investigated. Temperature characterization techniques and measurements under hydrostatic pressure identify an Auger process as the dominant nonradiative recombination mechanism in these devices. The results are supplemented with hydrostatic pressure measurements from three additional type-I GaInAsSb lasers, extending the wavelength range under investigation from 1.85 to 2.90 μm. Under hydrostatic pressure, contributions from the CHCC and CHSH Auger mechanisms to the threshold current density can be investigated separately. A simple model is used to fit the nonradiative component of the threshold current density, identifying the dominance of the different Auger losses across the wavelength range of operation. The CHCC mechanism is shown to be the dominant nonradiative process at longer wavelengths (> 2 μm). At shorter wavelengths (<; 2 μm), the CHSH mechanism begins to dominate the threshold current, as the bandgap approaches resonance with the spin-orbit split-off band.

The CHCC mechanism is shown to be the dominant nonradiative process at longer wavelengths (> 2 μm). At shorter wavelengths (<; 2 μm), the CHSH mechanism begins to dominate the threshold current, as the bandgap approaches resonance with the spin-orbit split-off band.